Orbital - Vol. 11 No. 2 - Special Issue April 2019
SHORT COMMUNICATIONS

Synthesis, Characterization and Optical Activity of RE-doped ZnWO4 Nanorods and Nanospheres by Hydrothermal Method

Kellen Cristina Mesquita Borges
Universidade Federal de Goiás- Regional Catalão
Rosana de Fátima Gonçalves
Universidade Federal de Goiás- Regional Catalão and UNIFESP- Universidade Federal de São Paulo
Murillo Henrique de Matos Rodrigues
Universidade Federal de Goiás- Regional Catalão
Rívia Aparecida Reinalda Arruda
Universidade Federal de Goiás- Regional Catalão
Maria Rita de Cassia Santos
Universidade Federal de Goiás- Regional Catalão
Ana Paula Azevedo Marques
UNIFESP- Universidade Federal de São Paulo
Mario Godinho Júnior
Universidade Federal de Goiás- Regional Catalão
Published April 30, 2019
Keywords
  • microwave- hydrothermal method,
  • nanomaterials,
  • rare earth,
  • semiconductor
How to Cite
(1)
Borges, K. C. M.; Gonçalves, R. de F.; Rodrigues, M. H. de M.; Arruda, R. A. R.; Santos, M. R. de C.; Marques, A. P. A.; Godinho Júnior, M. Synthesis, Characterization and Optical Activity of RE-Doped ZnWO4 Nanorods and Nanospheres by Hydrothermal Method. Orbital: Electron. J. Chem. 2019, 11, 115-118.

Abstract

This work has investigated the effect of different dopants on structure, morphology and optical property of ZnWO4. Rare-earth doped ZnWO(ZnWO4:RE, with 0.5, 1, and 2 mol% of Eu3+ and Pr3+) were successfully synthesized by coprecipitation method followed by microwave-assisted hydrothermal system at 140 °C for 1 h. XRD indicated that the crystals have a wolframite- type monoclinic structure and with the addition of dopants the crystallite size decreased. HR-TEM images revealed interesting homogenous nanorods for pure ZnWOcrystals with grow along (021) direction. For ZnWO4: RE we have found nanospheres morphologies, in which the decreasing crystal size were dependent on the RE doping concentration. IR spectra confirm the crystals structure. Ultraviolet–Visible diffuse reflectance spectra indicated that the optical band gap varies with increasing replacement of Zn2+ by RE ions. Egap was characteristic of semiconductor materials.

DOI: http://dx.doi.org/10.17807/orbital.v11i2.1350